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BFG410W,115
Açıklama:
BFG410W,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Kategoriler:
Ayrık Yarı İletken
Özellikler
Part Number:
BFG410W,115
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFG410W,115 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.09
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
21 dB
Width:
1.35 mm
Length:
2.2 mm
Frequency:
22 GHz
Output Power:
54 mW
Number of Pins:
4
Power Dissipation:
54 mW
Transition Frequency:
22 GHz
Max Breakdown Voltage:
4.5 V
Max Power Dissipation:
54 mW
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1 V
Collector Base Voltage (VCBO):
10 V
Collector Emitter Breakdown Voltage:
4.5 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
5685 In Stock
Applications:
Lighting
Appliances
Aerospace & defense
Mount:
Surface Mount
Height:
1 mm
Polarity:
NPN
Case/Package:
SOT-343
Max Frequency:
22 GHz
Contact Plating:
Tin
Number of Elements:
1
Element Configuration:
Single
Max Collector Current:
12 mA
Gain Bandwidth Product:
22 GHz
Min Operating Temperature:
-65 °C
Continuous Collector Current:
12 mA
Collector Emitter Voltage (VCEO):
4.5 V
Model numarası:
BFG410W, 115
Tanıtım
BFG410W,115 Overview\\\\nBFG410W,115 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFG410W,115 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. BFG410W,115
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