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BFP193WH6327XTSA1

Açıklama:
BFP193WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
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Özellikler
Part Number:
BFP193WH6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
BFP193WH6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.42
Remark:
Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain:
20.5 dB
hFE Min:
50
Frequency:
8 GHz
Power Gain:
20.5 dB
Case/Package:
SOT
Number of Pins:
4
Contact Plating:
Tin
Power Dissipation:
580 mW
Transition Frequency:
8 GHz
Max Collector Current:
80 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
2 V
Collector Emitter Voltage (VCEO):
12 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
8411 In Stock
Applications:
Wearables (non-medical) Infotainment & cluster
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Tape & Reel
Termination:
SMD/SMT
Noise Figure:
1 dB
Test Frequency:
900 MHz
Package Quantity:
3000
Number of Elements:
1
Max Breakdown Voltage:
12 V
Max Power Dissipation:
580 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
12 V
Model numarası:
Bfp193wh6327xtsa1
Tanıtım
BFP193WH6327XTSA1 Overview\\\\nBFP193WH6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BFP193WH6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensi
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