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NTJD4152PT1G
Açıklama:
NTJD4152PT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategoriler:
Ayrık Yarı İletken
Özellikler
Part Number:
NTJD4152PT1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NTJD4152PT1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.46
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width:
1.3462 mm
Length:
2.1844 mm
Packaging:
Tape and Reel
Rds On Max:
260 mΩ
Schedule B:
8541210080
Current Rating:
-880 mA
Input Capacitance:
155 pF
Threshold Voltage:
-1.2 V
Turn-On Delay Time:
5.8 ns
Voltage Rating (DC):
-20 V
Max Power Dissipation:
272 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
539 In Stock
Applications:
Appliances
PC & notebooks
Height:
990.6 µm
Fall Time:
6.5 ns
Rise Time:
6.5 ns
Resistance:
215 MΩ
Case/Package:
SOT-363-6
Number of Pins:
6
Power Dissipation:
272 mW
Number of Elements:
2
Turn-Off Delay Time:
13.5 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
600 mΩ
Continuous Drain Current (ID):
880 mA
Drain to Source Breakdown Voltage:
-20 V
Model numarası:
NTJD4152PT1G
Tanıtım
NTJD4152PT1G Overview\\\\nNTJD4152PT1G is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NTJD4152PT1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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