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SI1012X-T1-E3
Açıklama:
SI1012X-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategoriler:
Ayrık Yarı İletken
Özellikler
Part Number:
SI1012X-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI1012X-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
800 µm
Weight:
29.993795 mg
Packaging:
Cut Tape
Rds On Max:
700 mΩ
Nominal Vgs:
900 mV
Case/Package:
SC
Power Dissipation:
250 mW
Number of Channels:
1
Turn-On Delay Time:
5 ns
Turn-Off Delay Time:
25 ns
Max Power Dissipation:
250 mW
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
6 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
141 In Stock
Applications:
Broadband fixed line access
Lighting
Connected peripherals & printers
Width:
950 µm
Length:
1.7 mm
Fall Time:
5 ns
Rise Time:
5 ns
Resistance:
700 mΩ
Termination:
SMD/SMT
Number of Pins:
3
Threshold Voltage:
900 mV
Number of Elements:
1
Dual Supply Voltage:
20 V
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
700 mΩ
Continuous Drain Current (ID):
500 mA
Drain to Source Breakdown Voltage:
20 V
Model numarası:
SI1012X-T1-E3
Tanıtım
SI1012X-T1-E3 Overview\\nSI1012X-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI1012X-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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